CGD65B200S2-T13 Single FETs, MOSFETs_JYU INT'L INDUSTRY LIMITED_High reliability integrated circuits_programmable logic devices_FPGAs

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

CGD65B200S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT, 200MOHM, DFN5X6.

Tape & Reel (TR)

4355

Price:

$2.2750

inventory: 4355

Total number

Quantity

Price

Total price

$2.2750

$1.9100

$19.1000

100

$1.5450

$154.5000

500

$1.3750

$687.5000

1000

$1.1750

$1,175.0000

2000

$1.1050

$2,210.0000

5000

$1.0650

$5,325.0000

Obtain quotation information

product details

CGD65B200S2-T13

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

CGD65B200S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT,

Single FETs, MOSFETs

Tape & Reel (TR)

4355

Specification sheet

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	8.5A (Tc)
Rds On (Max) @ Id, Vgs	280mOhm @ 600mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 2.75mA
Supplier Device Package	8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On)	9V, 20V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 12 V