CGD65A130S2-T13 Single FETs, MOSFETs_JYU INT'L INDUSTRY LIMITED_High reliability integrated circuits_programmable logic devices_FPGAs

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CGD65A130S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT, 130MOHM, DFN8X8.

Tape & Reel (TR)

3352

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$1.6600

inventory: 3352

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Quantity

Price

Total price

$3.1250

$2.6800

$26.8000

100

$2.2300

$223.0000

500

$1.9700

$985.0000

1000

$1.7750

$1,775.0000

3500

$1.6600

$5,810.0000

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product details

CGD65A130S2-T13

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

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Quantity：

RoHS status：

Specification sheet：

CGD65A130S2-T13

Single FETs, MOSFETs

Cambridge GaN Devices

650V GAN HEMT,

Single FETs, MOSFETs

Tape & Reel (TR)

3352

Product parameters

TYPE	DESCRIPTION
Mfr	Cambridge GaN Devices
Series	ICeGaN™
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	16-PowerVDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Rds On (Max) @ Id, Vgs	182mOhm @ 900mA, 12V
FET Feature	Current Sensing
Vgs(th) (Max) @ Id	4.2V @ 4.2mA
Supplier Device Package	16-DFN (8x8)
Drive Voltage (Max Rds On, Min Rds On)	12V
Vgs (Max)	+20V, -1V
Drain to Source Voltage (Vdss)	650 V
Gate Charge (Qg) (Max) @ Vgs	2.3 nC @ 12 V