RN4990(TE85L,F) Bipolar Transistor Arrays, Pre-Biased_JYU INT'L INDUSTRY LIMITED_High reliability integrated circuits_programmable logic devices_FPGAs

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

RN4990(TE85L,F)

Bipolar Transistor Arrays, Pre-Biased

Toshiba Electronic Devices and Storage Corporation

NPN + PNP BRT Q1BSR=4.7KOHM Q1BE

Tape & Reel (TR)

Price:

$0.0300

inventory: 90

Total number

Quantity

Price

Total price

$0.1650

$0.1150

$1.1500

100

$0.0600

$6.0000

500

$0.0450

$22.5000

1000

$0.0350

$35.0000

3000

$0.0300

$90.0000

6000

$0.0300

$180.0000

9000

$0.0250

$225.0000

30000

$0.0250

$750.0000

75000

$0.0200

$1,500.0000

150000

$0.0200

$3,000.0000

Obtain quotation information

product details

RN4990(TE85L,F)

Part number：

Product classification：

Manufacturer：

Type：

Encapsulation：

Packing：

Quantity：

RoHS status：

Specification sheet：

RN4990(TE85L,F)

Bipolar Transistor Arrays, Pre-Biased

Toshiba Electronic Devices and Storage Corporation

NPN + PNP BRT Q

Bipolar Transistor Arrays, Pre-Biased

Tape & Reel (TR)

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	6-TSSOP, SC-88, SOT-363
Mounting Type	Surface Mount
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max	200mW
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 1mA, 5V
Frequency - Transition	250MHz, 200MHz
Resistor - Base (R1)	4.7kOhms
Supplier Device Package	US6

Online service

Online service

Online service

Online service

Online service