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  • image of Single FETs, MOSFETs>G01N20LE
  • image of Single FETs, MOSFETs>G01N20LE
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
G01N20LE
Single FETs, MOSFETs
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
-
Tape & Reel (TR)
826
Price:
$0.2050
inventory: 826
Total number

Quantity

Price

Total price

1

$0.2050

$0.2050

10

$0.1600

$1.6000

100

$0.0950

$9.5000

500

$0.0900

$45.0000

1000

$0.0600

$60.0000

3000

$0.0550

$165.0000

6000

$0.0550

$330.0000

9000

$0.0500

$450.0000

30000

$0.0450

$1,350.0000

75000

$0.0450

$3,375.0000

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product details
image of Single FETs, MOSFETs>G01N20LE
G01N20LE
Part number
Product classification
Manufacturer
Type
Encapsulation
Packing
Quantity
RoHS status
Specification sheet
G01N20LE
Single FETs, MOSFETs
Goford Semiconductor
N200V,RD(MAX)<8
Single FETs, MOSFETs
Tape & Reel (TR)
826 
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrGoford Semiconductor
SeriesTrenchFET®
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.7A (Tc)
Rds On (Max) @ Id, Vgs700mOhm @ 1A, 10V
Power Dissipation (Max)1.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageSOT-23-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds580 pF @ 25 V
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